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INFINEON  BSC016N06NSATMA1  MOSFET Transistor, N Channel, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V

INFINEON BSC016N06NSATMA1
Technical Data Sheet (605.16KB) EN Bekijk alle technische documenten

De afbeelding is alleen ter illustratie. Zie de productbeschrijving.

Productoverzicht

The BSC016N06NS is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • Saving space
  • Very low voltage overshoot
  • Superior thermal resistance

Productgegevens

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0014ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
139W
Transistor Case Style:
TDSON
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Power Management;
  • Alternative Energy;
  • Motor Drive & Control;
  • Industrial

Ook bekend als

BSC016N06NS , SP000924882

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
Malaysia

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.0005