Low

IR2111SPBF - 

Dual MOSFET IC, High Side And Low Side, 10V-20V Supply, 500mA Out, 150ns Delay, SOIC-8

INFINEON IR2111SPBF

De afbeelding is alleen ter illustratie. Zie de productbeschrijving.

Artikelnr. fabrikant:
IR2111SPBF
Ordercode:
8638861
Technische datasheet:
(EN)
Bekijk alle technische documenten

Productgegevens

:
150ns
:
-40°C
:
500mA
:
750ns
:
SOIC
:
125°C
:
8Pins
:
-
:
-
:
10V
:
Each
:
20V
:
High Side and Low Side
:
MSL 2 - 1 year
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Productoverzicht

The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
  • Floating channel designed for bootstrap operation
  • Tolerant to negative transient voltage (dV/dt immune)
  • Under-voltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set dead-time
  • High-side output in phase with input

Toepassingen

Power Management

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