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INFINEON  IR2111SPBF  Dual MOSFET IC, High Side And Low Side, 10V-20V Supply, 500mA Out, 150ns Delay, SOIC-8

INFINEON IR2111SPBF
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Productoverzicht

The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
  • Floating channel designed for bootstrap operation
  • Tolerant to negative transient voltage (dV/dt immune)
  • Under-voltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set dead-time
  • High-side output in phase with input

Productgegevens

Driver Configuration:
High Side and Low Side
Peak Output Current:
500mA
Supply Voltage Min:
10V
Supply Voltage Max:
20V
Driver Case Style:
SOIC
No. of Pins:
8Pins
Input Delay:
750ns
Output Delay:
150ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 2 - 1 year
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 2 - 1 year
Land van oorsprong:
Thailand

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85423990
Gewicht (kg):
.000161

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