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INFINEON  IRF7404TRPBF  MOSFET Transistor, P Channel, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV

INFINEON IRF7404TRPBF
Technical Data Sheet (231.74KB) EN Bekijk alle technische documenten

De afbeelding is alleen ter illustratie. Zie de productbeschrijving.

Productoverzicht

The IRF7404TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
  • Generation V technology
  • Dynamic dV/dt rating
  • Fast switching
  • Low static drain-to-source ON-resistance
  • Fully avalanche rating

Productgegevens

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-6.7A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.04ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-700mV
Power Dissipation Pd:
2.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
China

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.000175

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