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INFINEON  IRLL024NTRPBF  MOSFET Transistor, N Channel, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V

INFINEON IRLL024NTRPBF
Technical Data Sheet (145.19KB) EN Bekijk alle technische documenten

De afbeelding is alleen ter illustratie. Zie de productbeschrijving.

Productoverzicht

The IRLL024NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
  • Advanced process technology
  • Ultra-low ON-resistance
  • Fully avalanche rating
  • Low static drain-to-source ON-resistance
  • Dynamic dV/dt rating
  • Logic level

Productgegevens

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3.1A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.065ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
1W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
China

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.001728