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NEXPERIA  PBSS4160T  Bipolar (BJT) Single Transistor, NPN, 60 V, 220 MHz, 270 mW, 1 A, 400 hFE

NEXPERIA PBSS4160T
Artikelnr. fabrikant:
PBSS4160T
Ordercode:
8736219RL
Technische datasheet:
Bekijk alle technische documenten

De afbeelding is alleen ter illustratie. Zie de productbeschrijving.

Productoverzicht

The PBSS4160T is a 1A NPN breakthrough-in small signal (BISS) Transistor in a plastic package. It is suitable for use with the driver in low supply voltage applications and inductive load drivers.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency, reduces heat generation
  • Reduces printed-circuit board area required
  • PNP complement is PBSS5160T
  • U5 Marking code

Productgegevens

Transistor Polarity:
NPN
Transition Frequency ft:
220MHz
Collector Emitter Voltage V(br)ceo:
60V
DC Collector Current:
1A
DC Current Gain hFE:
400hFE
Power Dissipation Pd:
270mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Industrial
  • Automotive
  • Communications & Networking
  • Power Management
  • Signal Processing
  • Lighting
  • Motor Drive & Control

Wetgeving en milieu

Land van oorsprong:
China

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.000181

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