Low

NXP  PBSS4230T  Bipolar (BJT) Single Transistor, NPN, 30 V, 230 MHz, 300 mW, 2 A, 470 hFE

NXP PBSS4230T
Technical Data Sheet (251.01KB) EN Bekijk alle technische documenten

De afbeelding is alleen ter illustratie. Zie de productbeschrijving.

Productoverzicht

The PBSS4230T is a 2A NPN breakthrough-in small signal (BISS) Transistor in a plastic package providing ultra-low VCEsat and RCEsat parameters. It is suitable for use with the peripheral driver of driver in low supply voltage applications and inductive load drivers.
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • PNP complement is PBSS5230T
  • 3D Marking code

Productgegevens

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
230MHz
Power Dissipation Pd:
300mW
DC Collector Current:
2A
DC Current Gain hFE:
470hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Zoeken naar vergelijkbare producten  per overeenkomende kenmerken

Toepassingen

  • Industrial;
  • Signal Processing;
  • Consumer Electronics;
  • Lighting;
  • Motor Drive & Control;
  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
China

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.000008

Gekoppelde producten

Vergelijkbare producten