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SI1302DL-T1-E3
Power MOSFET, N Channel, 30 V, 640 mA, 0.48 ohm, SC-70, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | €0.515 |
| 10+ | €0.314 |
| 100+ | €0.242 |
| 500+ | €0.198 |
| 1000+ | €0.178 |
| 5000+ | €0.123 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1302DL-T1-E3
Order Code1470156
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id640mA
Drain Source On State Resistance0.48ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation310mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1302DL-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
640mA
Transistor Case Style
SC-70
Rds(on) Test Voltage
10V
Power Dissipation
310mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.48ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability