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S29GL01GS12DHVV10
Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, 120ns, FBGA-64
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ManufacturerINFINEON
Manufacturer Part NoS29GL01GS12DHVV10
Order Code4128132
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664015, S29GL01GS12DHVV10
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €13.860 |
| 10+ | €12.860 |
| 25+ | €12.450 |
| 50+ | €12.150 |
| 100+ | €11.850 |
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€13.86 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GS12DHVV10
Order Code4128132
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664015, S29GL01GS12DHVV10
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Size1Gbit
Flash Memory Configuration128M x 8bit
Memory Configuration128M x 8bit
IC Interface TypeParallel
InterfacesParallel
Memory Case StyleFBGA
IC Case / PackageFBGA
No. of Pins64Pins
Clock Frequency-
Clock Frequency Max-
Access Time120ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max105°C
Product Range3V Parallel NOR Flash Memories
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL01GS12DHVV10 is a MIRRORBIT™ eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
- 120ns random access time speed
- Fortified ball-grid array package (LAE064) 9 mm x 9mm package type
- Industrial plus temperature range from –40°C to +105°C
- VIO = 1.65V to VCC, VCC = 2.7V to 3.6V, highest address sector protected
- ×16 data bus, asynchronous 32byte page read
- Programming in page multiples, up to a maximum of 512bytes
- Automatic error checking and correction internal hardware ECC with single bit error correction
- Sector erase, uniform 128kbyte sectors
- Suspend and resume commands for program and erase operations
- 100000 program / erase cycles, 20 years data retention
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Size
1Gbit
Memory Configuration
128M x 8bit
Interfaces
Parallel
IC Case / Package
FBGA
Clock Frequency
-
Access Time
120ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
105°C
SVHC
No SVHC (21-Jan-2025)
Memory Density
1Gbit
Flash Memory Configuration
128M x 8bit
IC Interface Type
Parallel
Memory Case Style
FBGA
No. of Pins
64Pins
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Technical Docs (1)
Legislation and Environmental
Tariff No:85423275
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability