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Quantity | Price (ex VAT) |
---|---|
5+ | €0.257 |
50+ | €0.142 |
100+ | €0.110 |
500+ | €0.0839 |
1500+ | €0.0686 |
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Multiple: 5
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBCV26
Order Code9846816
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo30V
Power Dissipation Pd350mW
DC Collector Current1.2A
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE10000hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA.
- Sourced from Process 61
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
350mW
RF Transistor Case
SOT-23
DC Current Gain hFE
10000hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
30V
DC Collector Current
1.2A
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121
Product traceability