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MJ11033G
Darlington Transistor, PNP, 120 V, 300 W, 50 A, TO-3, 2 Pins
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €10.900 |
| 5+ | €9.750 |
| 10+ | €8.590 |
| 50+ | €8.400 |
| 100+ | €7.200 |
| 250+ | €7.080 |
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€10.90 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ11033G
Order Code2535620
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo120V
Power Dissipation Pd300W
DC Collector Current50A
RF Transistor CaseTO-3
No. of Pins2Pins
DC Current Gain hFE18000hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Diode protection to rated IC
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
300W
RF Transistor Case
TO-3
DC Current Gain hFE
18000hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
120V
DC Collector Current
50A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
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Associated Products
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.014061
Product traceability