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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD117T4G
Order Code2845303RL
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current2A
Power Dissipation Pd20W
DC Collector Current2A
Power Dissipation1.75W
RF Transistor CaseTO-252 (DPAK)
No. of Pins4Pins
DC Current Gain hFE200hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min200hFE
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
100V
Power Dissipation Pd
20W
Power Dissipation
1.75W
No. of Pins
4Pins
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
200hFE
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
2A
DC Collector Current
2A
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
200hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for MJD117T4G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
Product traceability