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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJF127G
Order Code2535641
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd2W
DC Collector Current5A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE2000hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJF127G is a 5A PNP bipolar power Darlington Transistor designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heat-sink or chassis.
- No isolating washers required
- Electrically similar to the popular TIP122 and TIP127
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Power Dissipation Pd
2W
RF Transistor Case
TO-220
DC Current Gain hFE
2000hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
5A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003316
Product traceability