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NTMFS4C09NT1G
Power MOSFET, N Channel, 30 V, 52 A, 0.0058 ohm, DFN, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €0.494 |
| 10+ | €0.341 |
| 100+ | €0.255 |
| 500+ | €0.238 |
| 1000+ | €0.222 |
| 5000+ | €0.205 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS4C09NT1G
Order Code2473413
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id52A
Drain Source On State Resistance0.0058ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation25.5W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
52A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
25.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0058ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0007