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HGTD1N120BNS9A
IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 Pins
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Available to Order
Manufacturer Standard Lead Time: 10 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 2500+ | €0.558 |
| 7500+ | €0.557 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
€1,395.00 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTD1N120BNS9A
Order Code4338955
Technical Datasheet
Continuous Collector Current5.3A
Collector Emitter Saturation Voltage2.5V
Power Dissipation60W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-252AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
SVHCLead (27-Jun-2024)
Technical Specifications
Continuous Collector Current
5.3A
Power Dissipation
60W
Transistor Case Style
TO-252AA
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Surface Mount
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026
Product traceability