Print Page
QS6M3TR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.17 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerROHM
Manufacturer Part NoQS6M3TR
Order Code4319878
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.5A
Continuous Drain Current Id P Channel1.5A
Drain Source On State Resistance N Channel0.17ohm
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleTSMT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.5A
Drain Source On State Resistance P Channel
0.17ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.5A
Drain Source On State Resistance N Channel
0.17ohm
Transistor Case Style
TSMT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000056
Product traceability