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TK5R3E08QM,S1X(S
Power MOSFET, N Channel, 80 V, 126 A, 4200 µohm, TO-220, Through Hole
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ManufacturerTOSHIBA
Manufacturer Part NoTK5R3E08QM,S1X(S
Order Code4173130
Product RangeU-MOSX-H Series
Also Known AsTK5R3E08QM, TK5R3E08QM,S1X
Technical Datasheet
842 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | €1.450 |
| 10+ | €0.728 |
| 100+ | €0.699 |
| 500+ | €0.670 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK5R3E08QM,S1X(S
Order Code4173130
Product RangeU-MOSX-H Series
Also Known AsTK5R3E08QM, TK5R3E08QM,S1X
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id126A
Drain Source On State Resistance4200µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeU-MOSX-H Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
126A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
4200µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
U-MOSX-H Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00196
Product traceability