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MJD3055T4G
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 1.75 W, TO-252 (DPAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | €0.474 |
| 500+ | €0.369 |
| 1000+ | €0.334 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€52.40 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD3055T4G
Order Code2845306RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation1.75W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency2MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
4Pins
DC Current Gain hFE Min
5hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Power Dissipation
1.75W
Transistor Mounting
Surface Mount
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426
Product traceability