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SI2333DS-T1-E3
P CHANNEL MOSFET, -12V, 4.1A TO-236, FUL
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No Longer Stocked
Delivery Charge: €25.00 once per order. 3 business days delivery for in stock items.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2333DS-T1-E3
Order Code2371205
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.032ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043