EVALAUDAMP24TOBO1

EVALAUDAMP24TOBO1 is a GaN e-mode high electron mobility transistor (HEMT) evaluation board. This is a 2-ch, 225W/ch (4ohm at ±43V) or 250W/ch (8ohm at ±63V) half-bridge class D audio power amplifier for Hi-Fi audio systems. It demonstrates how to use the CoolGaN™ gallium nitride transistor, IRS20957S controller IC, implement protection circuits and design an optimum PCB layout using IGT40R070D1 E8220 transistor. It features a 2-ch self-oscillating type PWM modulator for the lowest component count, highest performance and robust design. This topology represents an analogue version of a 2nd-order ∑-∆ modulation, having a class D switching stage inside the loop. The benefit of the ∑-∆ modulation in comparison to the carrier-signal-based modulation, is that all the error in the audible frequency range is shifted to the inaudible upper-frequency range by nature of its operation. Typical applications include AV receivers, home theatre systems, speakers and musical instrument amplifiers.

• IRS20957SPBF + IGT40R070D1 E8220 evaluation board
• Over-current protection, high-side and low-side CoolGaN™ transistors and over-voltage protection
• Under-voltage protection, high-side and low-side CoolGaN™ transistor and over-temperature protection
• Self-oscillating half-bridge topology with optional clock synchronization
• Bipolar power supply range from ±38V to ±75V
• Rated load impedance range from 4 to 8ohm
• 500KHz self-oscillating frequency
• 33dB voltage gain, 96 percent channel efficiency at single-channel driven, 250W, class D stage
• ±67mA/±85mA at no input signal ±43/±63V idling supply current
• Sigma-delta modulation enables the designer to apply sufficient error correction