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Hoeveelheid | |
---|---|
1+ | 3,470 € |
10+ | 3,400 € |
100+ | 3,320 € |
500+ | 3,250 € |
1000+ | 3,190 € |
Productgegevens
Alternatieven voor IKW25T120FKSA1
1 product gevonden
Productoverzicht
The IKW25T120 is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled HE diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 10µs Short-circuit withstand time
Toepassingen
Power Management, Alternative Energy, Motor Drive & Control, Consumer Electronics
Waarschuwingen
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische specificaties
50A
190W
TO-247
150°C
-
No SVHC (23-Jan-2024)
2.2V
1.2kV
3Pins
Through Hole
-
Technische documenten (4)
Aanverwante producten
3 gevonden producten
Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:Germany
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring