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Hoeveelheid | |
---|---|
1+ | 2,450 € |
10+ | 2,070 € |
25+ | 1,920 € |
50+ | 1,910 € |
100+ | 1,900 € |
250+ | 1,860 € |
500+ | 1,820 € |
1000+ | 1,790 € |
Productgegevens
Productoverzicht
The IR2181SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- Matched propagation delay for both channels
- Lower DI/DT gate driver for better noise immunity
- Logic and power ground ±5V offset
Toepassingen
Industrial, Consumer Electronics, Alternative Energy, Power Management
Technische specificaties
2Channels
High Side and Low Side
8Pins
Surface Mount
1.9A
10V
-40°C
180ns
-
MSL 2 - 1 year
-
MOSFET
SOIC
Non-Inverting
2.3A
20V
125°C
220ns
-
No SVHC (21-Jan-2025)
Technische documenten (1)
Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:Malaysia
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring