Heeft u meer nodig?
| Hoeveelheid | |
|---|---|
| 1+ | 2,350 € |
| 10+ | 1,140 € |
| 100+ | 1,060 € |
| 500+ | 0,849 € |
| 1000+ | 0,834 € |
Productgegevens
Productoverzicht
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Toepassingen
Motor Drive & Control, Automotive, Power Management
Waarschuwingen
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische specificaties
N Channel
130A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
75V
7800µohm
Through Hole
4V
3Pins
-
-
Technische documenten (2)
Alternatieven voor IRF1407PBF
2 gevonden producten
Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:South Korea
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring