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Hoeveelheid | |
---|---|
1+ | 5,060 € |
10+ | 4,480 € |
25+ | 4,430 € |
50+ | 4,400 € |
100+ | 3,480 € |
250+ | 3,470 € |
500+ | 3,430 € |
Productgegevens
Productoverzicht
MT48LC8M16A2P-6A:L is a SDR SDRAM. The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 33,554,432-bit banks are organized as 4096 rows by 2048 columns by 4bits. Each of the x8’s 33,554,432-bit banks are organized as 4096 rows by 1024 columns by 8 bits. Each of the x16’s 33,554,432-bit banks are organized as 4096 rows by 512 columns by 16 bits. The devices offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time, and the capability to randomly change column addresses on each clock cycle during a burst access.
- Fully synchronous; all signals registered on positive edge of system clock
- Internal, pipelined operation; column address can be changed every clock cycle
- Internal banks for hiding row access/precharge
- Auto precharge, includes concurrent auto precharge and auto refresh modes
- LVTTL-compatible inputs and outputs
- Single 3.3V ±0.3V power supply
- Timing – cycle time : 6ns at CL = 3 (x16 only)
- 8 Meg x 16 architecture
- 54-pin TSOP II (400 mil) package
- Commercial operating temperature range from 0°C to 70°C
Waarschuwingen
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische specificaties
SDR
8M x 16bit
TSOP-II
3.3V
0°C
-
No SVHC (17-Dec-2015)
128Mbit
167MHz
54Pins
Surface Mount
70°C
MSL 3 - 168 hours
Technische documenten (1)
Wetgeving en milieu
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RoHS
RoHS
Conformiteitsverklaring