NDP6060
Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through Hole
800 U kunt nu voorraad reserveren
| Hoeveelheid | |
|---|---|
| 1+ | 3,270 € |
| 10+ | 1,750 € |
| 100+ | 1,680 € |
| 500+ | 1,500 € |
| 1000+ | 1,410 € |
Productgegevens
Productoverzicht
The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
- Critical DC electrical parameters specified at elevated temperature
- High density cell design for extremely low RDS (ON)
Technische specificaties
N Channel
48A
TO-220AB
10V
100W
175°C
-
Lead (27-Jun-2024)
60V
0.025ohm
Through Hole
2.9V
3Pins
-
-
Technische documenten (2)
Wetgeving en milieu
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RoHS
RoHS
Conformiteitsverklaring