FFSH10120A-F085
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 1.2 kV, 10 A, 62 nC, TO-247
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| Hoeveelheid | |
|---|---|
| 1+ | 7,710 € |
| 5+ | 7,160 € |
| 10+ | 6,600 € |
| 50+ | 4,910 € |
| 100+ | 4,580 € |
| 250+ | 4,240 € |
Productgegevens
Productoverzicht
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Opmerkingen
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische specificaties
EliteSiC Series
1.2kV
62nC
2 Pin
Through Hole
Lead (27-Jun-2024)
Single
10A
TO-247
175°C
AEC-Q101
Technische documenten (2)
Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:China
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring