LTC7893AUFDM#PBF

LTC7893AUFDM#PBF is a high-performance, step-up, DC-to-DC switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100V. The LTC7893 solves many of the challenges traditionally faced when using GaN FETs. The LTC7893 simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon MOSFET solution. The internal smart bootstrap switches prevent overcharging of the BOOST pin to the SW pin high-side driver supply during dead times, protecting the gate of the top GaN FET. The dead times of the LTC7893 can optionally be optimized with external resistors for margin or to tailor the application for higher efficiency and allowing for high frequency operation. Applications include industrial power systems, military avionics and medical systems, telecommunications power systems.

• GaN drive technology fully optimized for GaN FETs, resistor-adjustable dead times
• No catch, clamp, or bootstrap diodes needed
• Internal smart bootstrap switches prevent overcharging of high-side driver supply
• Split-output gate drivers for adjustable turn on and turn off driver strengths
• Accurate adjustable driver voltage and UVLO
• Spread spectrum frequency modulation
• VBIAS shutdown current is 1.1µA typ at RUN=0V, TA=25°C
• Soft-start charge current is 12µA typ at SS=0V, TA=25°C
• 28-lead QFN (4mm x 5mm, plastic side wettable) package
• Temperature range from -40°C to 125°C