BFP640H6327XTSA1
Transistor RF - Bipolaire, NPN, 4.5 V, 40 GHz, 200 mW, 50 mA, SOT-343
3.000 Vous pouvez réserver des unités dès maintenant
| Quantité | |
|---|---|
| 5+ | 0,285 € |
| 50+ | 0,182 € |
| 100+ | 0,157 € |
| 500+ | 0,149 € |
| 1500+ | 0,146 € |
Informations produit
Aperçu du produit
The BFP 640 H6327 is a NPN low-noise Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 10mA this device supports energy efficient designs. The typical transition frequency is approximately 40GHz, hence the device offers high power gain at frequencies up to 8GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
- Linear low-noise wide band transistor
- High linearity
- High transition frequency
- Low power consumption
- Easy to use
- Halogen-free
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
NPN
40GHz
50mA
4Broche(s)
Montage en surface
-
MSL 1 - Illimité
4.5V
200mW
SOT-343
110hFE
150°C
AEC-Q101
No SVHC (21-Jan-2025)
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Malaysia
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit