BSC320N20NS3GATMA1
MOSFET de puissance, Canal N, 200 V, 36 A, 0.032 ohm, TDSON, Montage en surface
Vous en voulez davantage ?
| Quantité | |
|---|---|
| 100+ | 1,360 € |
| 500+ | 1,180 € |
| 1000+ | 1,150 € |
Informations produit
Aperçu du produit
The BSC320N20NS3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Environmentally-friendly
- Easy to design in
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal N
36A
TDSON
10V
125W
150°C
-
No SVHC (21-Jan-2025)
200V
0.032ohm
Montage en surface
3V
8Broche(s)
-
MSL 1 - Illimité
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Malaysia
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit