Informations produit
Aperçu du produit
The IRF7404TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
- Generation V technology
- Dynamic dV/dt rating
- Fast switching
- Low static drain-to-source ON-resistance
- Fully avalanche rating
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal P
6.7A
SOIC
4.5V
2.5W
150°C
-
No SVHC (23-Jan-2024)
20V
0.04ohm
Montage en surface
700mV
8Broche(s)
-
MSL 1 - Illimité
Documents techniques (4)
Produits associés
1 produit trouvé
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit