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Quantité | |
---|---|
1+ | 11,250 € |
5+ | 10,440 € |
10+ | 9,630 € |
50+ | 8,830 € |
100+ | 8,020 € |
250+ | 7,560 € |
Informations produit
Aperçu du produit
The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
- 3.5dB Noise figure (50Ω) at 1GHz
- <lt/>1pA Collector to collector leakage
- Complete isolation between transistors
Remarques
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
NPN et PNP complémentaires
8V
37mA
150mW
130hFE
16Broche(s)
125°C
5.5GHz
-
No SVHC (21-Jan-2025)
8V
37mA
150mW
130hFE
SOIC
Montage en surface
8GHz
-
MSL 3 - 168 heures
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Philippines
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit