HGTD1N120BNS9A
IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 Broche(s)
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| Quantité | |
|---|---|
| 100+ | 0,809 € |
| 500+ | 0,651 € |
| 1000+ | 0,603 € |
Informations produit
Aperçu du produit
The HGTD1N120BNS9A is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
- Short-circuit rating
- Avalanche rated
- 2.5V @ IC = 1A Low saturation voltage
- 258ns Fall time @ TJ = 150°C
- 298W Total power dissipation @ TC = 25°C
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
5.3A
2.5V
60W
1.2kV
TO-252AA
150°C
-
Lead (27-Jun-2024)
5.3A
2.5V
60W
1.2kV
3Broche(s)
Montage en surface
-
Documents techniques (3)
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit