STB6NK90ZT4
MOSFET de puissance, Canal N, 900 V, 2.9 A, 2 ohm, TO-263 (D2PAK), Montage en surface
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| Quantité | |
|---|---|
| 1+ | 3,630 € |
| 10+ | 2,640 € |
| 50+ | 2,270 € |
| 200+ | 1,900 € |
| 500+ | 1,710 € |
Informations produit
Aperçu du produit
The STB6NK90ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs.
- 100% Avalanche tested
- Extremely high dV/dt capability
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal N
2.9A
TO-263 (D2PAK)
10V
140W
150°C
-
Lead (21-Jan-2025)
900V
2ohm
Montage en surface
3.75V
3Broche(s)
-
MSL 1 - Illimité
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit