STPSC10H065G-TR
Diode Schottky Carbure de silicium, Simple, 650V, 10 A, 28,5 nC, TO-263
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| Quantité | |
|---|---|
| 100+ | 1,900 € |
| 500+ | 1,530 € |
| 1000+ | 1,430 € |
Informations produit
Aperçu du produit
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Spécifications techniques
650V
650V
28.5nC
3 broches
Montage en surface
No SVHC (21-Jan-2025)
Une
10A
TO-263 (D2PAK)
175°C
-
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit